I WEI CHEN

Ferroelectrics

63. Chen, S. Y.; Chen, I. W., " Temperature-time texture transition of Pb(Zr_1-XTi_X)O₃ thin-films: I. Role of Pb-rich intermediate phases", J. Am. Ceram. Soc. 77, 2332-2336 (1994). http://dx.doi.org/10.1111/j.1151-2916.1994.tb04602.x

64. Chen, S. Y.; Chen, I. W., "Temperature-time texture transition of Pb(Zr_1-XTi_X)O₃ thin-films: II. Heat-treatment and compositional effects", J. Am. Ceram. Soc. 77, 2337-2344 (1994). http://dx.doi.org/10.1111/j.1151-2916.1994.tb04603.x

81. Chen, I. W.; Li, P.; Wang, Y., "Structural origin of relaxor perovskites", J. Phys. Chem. Solids 57, 1525-1536 (1996).  http://dx.doi.org/10.1016/0022-3697(96)00023-6

91. Chen, S. Y.; Chen, I. W., "Comparative role of metal-organic decomposition-derived 100 and 111 in electrical properties of Pb(Zr,Ti)O₃ thin films", Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap. 36, 4451-4458 (1997). http://dx.doi.org/10.1143/jjap.36.4451

95. Chen, I. W.; Wang, Y., "A domain wall model for relaxor ferroelectrics", Ferroelectrics 206, 245-263 (1998). http://dx.doi.org/10.1080/00150199808009162

96. Chen, S. Y.; Chen, I. W., "Texture development, microstructure evolution, and crystallization of chemically derived PZT thin films", J. Am. Ceram. Soc. 81, 97-105 (1998). http://dx.doi.org/10.1111/j.1151-2916.1998.tb02300.x

97. Du, X. F.; Chen, I. W., "Ferroelectric thin films of bismuth-containing layered perovskites: Part I, Bi₄Ti₃O₁₂", J. Am. Ceram. Soc. 81, 3253-3259 (1998). http://dx.doi.org/10.1111/j.1151-2916.1998.tb02764.x

98. Du, X. F.; Chen, I. W., "Ferroelectric thin films of bismuth-containing layered perovskites: Part II, PbBi₂Nb₂O₉", J. Am. Ceram. Soc. 81, 3260-3264 (1998). http://dx.doi.org/10.1111/j.1151-2916.1998.tb02765.x

99. Du, X. F.; Chen, I. W., "Ferroelectric thin films of bismuth-containing layered perovskites: Part III, SrBi₂Nb₂O₉ and c-oriented Bi₄Ti₃O₁₂ template", J. Am. Ceram. Soc. 81, 3265-3269 (1998). http://dx.doi.org/10.1111/j.1151-2916.1998.tb02766.x

100. Du, X. F.; Chen, I. W., "Fatigue of Pb(Zr_0.53Ti_0.47)O₃ ferroelectric thin films", J. Appl. Phys. 83, 7789-7798 (1998). http://dx.doi.org/10.1063/1.367953

101. Du, X. F.; Chen, I. W., "Model experiments on fatigue of Pb(Zr_0.53Ti_0.47)O₃ ferroelectric thin films", Appl. Phys. Lett. 72, 1923-1925 (1998). http://dx.doi.org/10.1063/1.121228

102. Du, X. F.; Chen, I. W., "A Lorentz field theory for ferroelectric transitions in layered perovskites", Ferroelectrics 208, 237-256 (1998). http://dx.doi.org/10.1080/00150199808014878

103. Egami, T.; Dmowski, W.; Teslic, S.; Davies, P. K.; Chen, I. W.; Chen, H., "Nature of atomic ordering and mechanism of relaxor ferroelectric phenomena it PMN", Ferroelectrics 206, 231-244 (1998). http://dx.doi.org/10.1080/00150199808009161

104. Egami, T.; Teslic, S.; Dmowski, W.; Davies, P. K.; Chen, I. W.; Chen, H., "Microscopic origin of relaxor ferroelectricity in PMN and PLZT", J. Korean Phys. Soc. 32, S935-S938 (1998).

108. Chen, I. W.; Wang, Y., "Activation field and fatigue of (Pb, La)(Zr, Ti)O₃ thin films", Appl. Phys. Lett. 75, 4186-4188 (1999). http://dx.doi.org/10.1063/1.125577

117. Chen, I. W., "Structural origin of relaxer ferroelectrics - revisited", J. Phys. Chem. Solids 61, 197-208 (2000). http://dx.doi.org/10.1016/s0022-3697(99)00282-6

125. Li, X.; Mamchik, A.; Chen, I. W., "Stability of electrodeless ferroelectric domains near a ferroelectric/dielectric interface", Appl. Phys. Lett. 79, 809-811 (2001). http://dx.doi.org/10.1063/1.1390326

163. Wang, X. H.; Deng, X. Y.; Bai, H. L.; Zhou, H.; Qu, W. G.; Li, L. T.; Chen, I. W., "Two-step sintering of ceramics with constant grain-size, II: BaTiO₃ and Ni-Cu-Zn ferrite", J. Am. Ceram. Soc. 89, 438-443 (2006). http://dx.doi.org/10.1111/j.1551-2916.2005.00728.x

166. Shin, Y. H.; Grinberg, I.; Chen, I. W.; Rappe, A. M., "Nucleation and growth mechanism of ferroelectric domain-wall motion", Nature 449, 881-884 (2007). http://dx.doi.org/10.1038/nature06165

167. Deng, X. Y.; Wang, X. H.; Gui, Z. L.; Li, L. T.; Chen, I. W., "Grain-size effects on the hardness of nanograin BaTiO₃ ceramics", J. Electroceram. 21, 238-241 (2008). http://dx.doi.org/10.1007/s10832-007-9142-2

171. Wang, X. H.; Deng, X. Y.; Zhou, H.; Li, L. T.; Chen, I. W., "Bulk dense nanocrystalline BaTiO₃ ceramics prepared by novel pressureless two-step sintering method", J. Electroceram. 21, 230-233 (2008). http://dx.doi.org/10.1007/s10832-007-9143-1

173. Zou, T. T.; Wang, X. H.; Wang, H.; Zhong, C. F.; Li, L. T.; Chen, I. W., "Bulk dense fine-grain (1-x)BiScO₃-xPbTiO₃ ceramics with high piezoelectric coefficient", Appl. Phys. Lett. 93, (2008). http://dx.doi.org/10.1063/1.2995861