PECVD Recipes
Updated on 10/9/2014
Note: Since the process is carried out at high temperature, some outgas or vaporized species out of a dirty wafer may affect the quality of the deposited film. So, make sure that the wafer-as-received is cleaned with Acetone and IPA (or Methanol) using ultrasonicator for each 3~5 min before use.
Contents
1 SiO2
2 Si3N4
3 a-Si (deposited on PECVD SiO2)
1. SiO2
1.1 Default recipe
- T = 350 ºC
- 10%SiH4/He = 50 sccm
- N2O = 710 sccm
- N2 = 90 sccm
- Pressure = 1,000 mTorr
- RF = 20 W
- Refractive index = 1.462 at 632.8 nm (updated on 9/12/2012)
- Literature value = 1.457 at 632.8 nm [1]
1.2 Comparison with other tool
2. Si3N4
2.1 Default recipe
- T = 350 ºC
- 10%SiH4/He = 170 sccm
- NH3 = 20 sccm
- N2 = 820 sccm
- Pressure = 1,000 mTorr
- RF = 20 W (13 sec)
- LF = 20 W (7 sec)
- Refractive index = 1.981 at 632.8 nm (updated on 9/12/2012)
- Literature value = 2.023 at 632.8 nm [2]
2.2 Comparison with other tool
2.3 High stress films
- updated on 10/7/2013
- Prepared by
Chia-Hsing Pi
3. a-Si (deposited on PECVD SiO2)
3.1 Default recipe
- T = 250 ºC
- 10%SiH4/He = 500 sccm
- Pressure = 1,000 mTorr
- RF = 8 W
- Deposition rate = 5.7 nm/min (updated on 9/21/2012)
- Refractive index = 3.843 (updated on 9/21/2012)
- Literature value = 4.500 at 632.8 nm [3]
3.2 Comparison with other tool
- a-Si on 100 nm thick SiO2 layer on Si wafer
