List of Publications

Journal Articles (in chronological order):

1. R. A. Brown, D. Maroudas, T. Sinno, Modeling Point Defect Dynamics in the Crystal Growth of Silicon, Journal of Crystal Growth, 137 (1994) 12-25.

2. T. Sinno, Z. K. Jiang, and R. A. Brown, Atomistic Simulation of High-Temperature Point Defect Properties in Crystalline Silicon, Applied Physics Letters, 68 (1996) 3028-3031.

3. T. Sinno and R. A. Brown, Point defect and microdefect dynamics in Czochralski-grown silicon: simulations and analysis of self-consistent models. Diffusion & Defect Data Pt.B: Solid State Phenomena, 57-58, (1997) 343-348.

4. T. Sinno, F. K. von Gottberg, R. A. Brown, Investigation of Point Defect Clusters in Silicon Using Parallel Molecular Dynamics, Journal of Computer-Aided Materials Design, 4 (1997) 29.

5. T. Sinno, R. A. Brown, E. Dornberger, and W. von Ammon, On the Dynamics of the Oxidation-Induced Stacking-Fault Ring in Czockralski Silicon Crystals, Applied Physics Letters, 70 (1997) 2250-2253.

6. T. Sinno, R. A. Brown, E. Dornberger, and W. von Ammon, Point Defect Dynamics and the Oxidation-Induced Stacking-Fault Ring in Czockralski-Grown Silicon Crystals, Journal of the Electrochemical Society 145 (1998) 302-318.

7. T. Sinno, R. A. Brown, Modeling Microdefect Formation in Czochralski Silicon, Journal of the Electrochemical Society, 146 (1999) 2300-2312.

8. T. Sinno, H. Susanto, R. A. Brown, Boron Retarded Self-Interstitial Diffusion in Czochralski Growth of Silicon Crystals and its Role in Oxidation-Induced Stacking-Fault Ring Dynamics, Applied Physics Letters, 75, (1999) 1544-1546.

9. T. Sinno, E. Dornberger, R. A. Brown, W. von Ammon, and F. Dupret, Modeling and Simulation for Defect Engineering of CZ-grown Silicon Crystals, Materials Science & Engineering Reports R28 (2000) 149-198.

10. Z. Wang, T. Sinno, R. A. Brown, Enhanced Oxygen Precipitation in Silicon Due to Grown-In Spatial Inhomogenieties in the Oxygen Distribution, Applied Physics Letters 78 (2001) 180-182.

11. E. Dornberger, W. von Ammon, J. Virbulis, B. Hanna B, and T. Sinno, Modeling of transient point defect dynamics in Czochralski silicon crystals, Journal of Crystal Growth, 230 (2001) 291-299.

12. M. Prasad and T. Sinno, An Atomistic to Continuum Description of Vacancy Cluster Properties in Crystalline Silicon, Applied Physics Letters, 80 (2002) 1951-1953.

13. M. Prasad and T. Sinno, An Internally Consistent Approach for Modeling Solid-State Aggregation: I. Atomistic Calculations of Vacancy Clustering in Silicon, Physical Review B 68 (2003) 45206 1-12.

14. M. Prasad and T. Sinno, An Internally Consistent Approach for Modeling Solid-State Aggregation: II. Mean-field Representations of Atomistic Processes, Physical Review B 68 (2003) 45207 1-13.

15. T. Frewen, T. Sinno, E. Dornberger, R. Hoelzl, W. von Ammon, and H. Bracht, Parameterization of Transient Defect Dynamics Models in Czochralski Silicon Crystal Growth, Journal of the Electrochemical Society, 150 (2003) G673-G682.

16. T. Sinno and M. Prasad, Internally Consistent Verification of Mean-Field Models of Aggregation using Large-Scale Molecular Dynamics, Molecular Physics, 102 (2004) 395-403.

17. S. Kapur, M. Prasad, and T. Sinno, Carbon-Mediated Aggregation of Self-Interstitials in Silicon, Physical Review B, 69 (2004) 155214 1-8.

18. T. A. Frewen, T. Sinno, W. Haeckl, and W. von Ammon, A Systems-Based Approach for Generating Quantitative Models of Microstructural Evolution in Silicon Materials Processing, in press: Computers and Chemical Engineering.

19. M. Prasad and T. Sinno, Feature-Activated Molecular Dynamics: An Efficient Approach for Atomistic Simulation of Solid-State Aggregation Phenomena, Journal of Chemical Physics, 121 (2004) 8699-8710. Selected to be included in the Virtual Journal of Biological Physics Research, 8 (2004).

20. T. Frewen, M. Prasad, W. Haeckl, W. von Ammon and T. Sinno, A Microscopically Accurate Continuum Model for Void Formation During Semiconductor Silicon Processing, Journal of Crystal Growth, 279 (2005) 258-271.

21. M. Prasad and T. Sinno, Feature Activated Molecular Dynamics: Parallelization and Application to Systems with Globally Varying Mechanical Fields, in press: Journal of Computer-Aided Molecular Design.

22. S. Kapur, M. Prasad, J. C. Crocker, and T. Sinno, On the Configurational Entropy of Atomic Clusters in Crystalline Solids, in press: Physical Review B.

23. J. Dai, J. Kanter, S. Kapur, W. D. Seider, and T. Sinno, On-Lattice Kinetic Monte Carlo Simulations of Point Defect Aggregation in Entropically Influenced Crystalline Systems, submitted to Physical Review B.

Conference Proceedings (in chronological order) :

1. T. Sinno and R. A. Brown, Computation of the onset of point defect aggregation in crystalline silicon using an empirical interatomic potential, .in: Defect and Impurity Engineered Semiconductors and Devices, Mat. Res. Soc. Symp. Proc. (1995) 95-100.

2. Z. K. Jiang, T. Sinno, R. A. Brown, Modeling defect-cluster formation in crystalline silicon, Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology. Electrochem. Soc. Proc. (1996) 273-287

3. T. Sinno and R. A. Brown, Modeling microdefect formation in Czochralski silicon, Proceedings of the Eighth International Symposium on Silicon Materials Science and Technology. Electrochem. Soc. Proc. (1998) 529-545.

4. E. Dornberger, T. Sinno, J. Esfandyari, J. Vanhellemont, R. A. Brown, and W. von Ammon, Determination of intrinsic point defect properties in silicon by analyzing OSF ring dynamics and void formation. Proceedings of the Fifth International Symposium on High Purity Silicon V. Proc. Electrochem. Soc. (1998) 170-187.

5. H. Susanto, T. Sinno, R. A. Brown, Influence of boron on OSF-ring dynamics in Czochralski silicon, Proceedings of the Third International Symposium on Defects in Silicon, Electrochem. Soc. Proc., PV99-1 (1999) 479-490.

6. T. Sinno, T. Frewen, E. Dornberger, R. Hoelzl, and C. Hoess, Parameterization of Transient Models of Defect Dynamics in Czochralski Silicon Crystal Growth, Mat. Res. Soc. Proc. Vol. 700 (2001) S8.3.1-6.

7. T. Sinno, Thermophysical Properties of Intrinsic Point Defects in Crystalline Silicon, Electrochem. Soc. Proc. PV2002-2 (2002) 212-223.

8. T. Sinno T. A. Frewen, W. Haeckl, W. von Ammon, Systems-based Approach for Quantitative Modeling of Point Defect Transport and Reaction in Silicon, Proceedings of the 4th International Symposium on Advanced Science and Technology of Silicon Materials, JSPS, (2004).